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Transistor
2SA0838 (2SA838)
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC1359
Unit: mm
5.00.2
4.00.2
q
High transition frequency fT.
0.70.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
Ratings -30 -20 -5 -30 250 150 -55 ~ +150 Unit V V V
0.45+0.15 0.1 2.5+0.6 0.2 1 23
12.90.5
0.45+0.15 0.1 2.5+0.6 0.2
mW C C
2.30.2
mA
0.70.2
1:Emitter 2:Collector 3:Base EIAJ:SC-43A TO-92-A1 Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance
(Ta=25C)
Symbol ICBO ICEO IEBO hFE* VCE(sat) VBE fT NF Zrb Cre Conditions VCB = -10V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCE = -10V, IC = -1mA IC = -10mA, IB = -1mA VCE = -10V, IC = -1mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 1mA, f = 5MHz VCE = -10V, IC = -1mA, f = 2MHz VCE = -10V, IC = -1mA, f = 10.7MHz 150 70 - 0.1 - 0.7 300 2.8 22 1.2 4.0 50 2.0 min typ max - 0.1 -100 -10 220 V V MHz dB pF Unit A A
*h
FE
Rank classification
B 70 ~ 140 C 110 ~ 220 hFE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
90
5.10.2
s Features
Transistor
PC -- Ta
500 -30 Ta=25C 450 -25
2SA0838
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 -1 Ta=75C 25C
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (mW)
350 300 250 200 150 100 50 0 0 40 80 120 160 200
Collector current IC (mA)
400
-20
IB=-250A -200A
-15 -150A -10 -100A -50A
- 0.3 - 0.1
-25C
-5
- 0.03 - 0.01 - 0.1 - 0.3
0 0 -2 -4 -6 -8 -10
-1
-3
-10
-30
-100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
hFE -- IC
-120 6
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=-10V f=1MHz IE=0 Ta=25C
Cre -- VCE
Common emitter reverse transfer capacitance Cre (pF)
5 IC=-1mA f=10.7MHz Ta=25C 4
Forward current transfer ratio hFE
-100 Ta=75C -80
5
25C -25C
4
3
-60
3
2
-40
2
-20
1
1
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
0 -1
-3
-10
-30
-100
Collector current IC (mA)
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
fT -- IE
600 VCB=-10V Ta=25C 24
PG -- IC
VCE=-10V f=100MHz Ta=25C 5
NF -- IE
VCB=-10V f=100MHz Ta=25C 4
Transition frequency fT (MHz)
500
20
400
16
Noise figure NF (dB)
-1 -3 -10 -30 -100
Power gain PG (dB)
3
300
12
2
200
8
100
4
1
0 0.1
0.3
1
3
10
30
100
0 - 0.1 - 0.3
0 0.1
0.3
1
3
10
Emitter current IE (mA)
Collector current IC (mA)
Emitter current IE (mA)
91
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2001 MAR

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